Quantum conductors formation and resistive switching memory effects in zirconia nanotubes

The development prospects of memristive elements for non-volatile memory with use the metal-dielectric-metal sandwich structures a thin oxide layer are due to possibility reliable forming sustained functional states quantized resistance. In paper we study properties fabricated memristors based on non-stoichiometric $ZrO_2$ nanotubes in different resistive switching modes. Anodic oxidation $Zr$ foil has been used synthesize zirconia $1.7$ $\mu$$m$ thickness, consisting an ordered array vertically oriented outer diameter 75 nm. $Zr/ZrO_2/Au$ have by mask magnetron deposition. effects unipolar and bipolar modes investigated. resistance ratios $\geq3\cdot10^4$ between high-resistance (HRS) low-resistance (LRS) evaluated. It founded conductivity LRS is wide range minimum value $0.5G_0=38.74$ $\mu$$S$ formation quantum conductors oxygen vacancies ($V_O$). Resistive mechanisms allowing migration $V_O$ applied electric field proposed. shown that ohmic type space charge limited conductivities realized HRS, correspondingly. We present results which can be effective nanolayered structure multiple high ratio.